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BCR08AM-14 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE PLANAR PASSIVATION TYPE
BCR08AM-14
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions in mm
φ 5.0 MAX.
4.4

Ž
Œ
VOLTAGE
CLASS
TYPE
NAME
ΠT1 TERMINAL
 T2 TERMINAL
Ž GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ 0.7
1.25 1.25
ŒŽ
q IT (RMS) ............................................................... 0.8A
q VDRM ................................................................. 700V
q IFGT !, IRGT ! , IRGT # ....................................... 5mA
JEDEC : TO-92
APPLICATION
Contactless AC switches, heating, refrigerator, washing machine, electric fan,
vending machines, trigger circuit for low and medium triac, solid state relay,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
14
V DRM
Repetitive peak off-state voltageV1
700
V
V DSM
Non-repetitive peak off-state voltageV1
840
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
— Weight
V1. Gate open.
Conditions
Ratings
Unit
Commercial frequency, sine full wave 360° conduction, Tc=67°C
0.8
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
8
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
0.26
A2s
Typical value
1
W
0.1
W
6
V
1
A
–40 ~ +125
°C
–40 ~ +125
°C
0.23
g
Feb.1999