2SK2974 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – RF POWER MOS FET(VHF/UHF power amplifiers)

MITSUBISHI RF POWER MOS FET
2SK2974
DESCRIPTION
2SK2974 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
INDEX MARK
(TOP)
FEATURES
• High power gain:Gpe≥8.4dB
@VDD=7.2V,f=450MHz,Pin=30dBm
• High efficiency:55% typ.
• Source case type seramic package
(connected internally to source)
3
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
4.9
1
2
Dimensions in mm
(BOTTOM)
2.0
3.50
t=1.2MAX
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
INDEX
MARK
LOT No.
TYPE No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Conditions
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch
Channel dissipation
Tc=25˚C
(Note2)
Tj
Junction temperature
Tstg
Storage temperature
Note1: Above parameters are guaranteed independently.
2: Solder source pad on Copper Block(14×2.8×2mm)
Ratings
17
±10
10
175
-40 to +110
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Test conditions
IDSS
VDS=17V, VGS=0V
IGSS
VGS=10V, VDS=0V
VTH
Threshold voltage
VDS=7V, IDS=1mA
Ciss
VGS=10V, VDS=0V,f=1MHz
Coss
VDS=10V, VGS=0V,f=1MHz
Pout
hD
VDS=7.2V, Pin=1W,f=450MHz
Note: Above parameters,ratings,limits and conditions are subject to change.
Unit
V
V
W
˚C
˚C
Limits
Unit
Min Typ Max
10
µA
1
µA
1.0
1.7
V
90
pF
95
pF
7
8
W
50
55
%
Nov. ´97