2SK2973 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – RF POWER MOS FET

MITSUBISHI RF POWER MOS FET
2SK2973
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
OUTLINE DRAWING
4.6MAX
FEATURES
• High power gain:Gpe≥13dB
@VDD=9.6V,f=450MHz,Pin=17dBm
• High efficiency:55% typ.
• Source case type SOT-89 package
(connected internally to source)
1.6±0.2
2
1
3
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
0.53
1.5 MAX
3.0
0.48MAX
1 : DRAIN
2 : SOURCE
3 : GATE
SOT-89
Dimensions in mm
1.5±0.1
0.4 ^+0.03
-0.05
MARKING
MARKING
TYPE No.
K1
LOT No.
ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Conditions
VDSS
Drain to source voltage
VGSS
Gate to source voltage
Pch
Channel dissipation
Tc=25˚C
(Note2)
Tj
Junction temperature
Tstg
Storage temperature
Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70×70mm,t=1.6mm Epoxy glass)
Ratings
17
±10
1.5
150
-40 to +110
ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)
Symbol
Parameter
Test conditions
IDSS
VDS=12V, VGS=0V
IGSS
VGS=10V, VDS=0V
VTH
Threshold voltage
VDS=7V, IDS=1mA
Ciss
VGS=10V, VDS=0V,f=1MHz
Coss
VDS=10V, VGS=0V,f=1MHz
Pout
hD
VDS=9.6V, Pin=50mW,f=450MHz
Note: Above parameters,ratings,limits and conditions are subject to change.
Unit
V
V
W
˚C
˚C
Limits
Unit
Min Typ Max
10
µA
1
µA
1.2
1.8
V
10
pF
8
pF
1
1.2
W
45
55
%
Nov. ´97