1951A Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – Medium Power Microwave MESFET

PRELIMINARY
DESCRIPTION
The MGF1951A is a 20mW MESFET for S- to Ku-band
driver amplifiers and oscillators.
Its lead-less ceramic package assures minimum parasitics.
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF1951A
Medium Power Microwave MESFET
FEATURES
• High Gain and High Output Power
G_LP=9dB, P_1dB=13dBm (typ) @ f=12GHz
• Leadless Ceramic Package
APPLICATION
S- to Ku-Band Driver Amplifiers and Oscillators
QUALITY
General Grade
ORDERING INFORMATION
Part Number
Quantity
MGF1951A-01 3.000 pcs/reel
Supply Form
Tape & Reel
ABSOLUTE MAXIMUM RATINGS (T_a=+25°C)
Symbol Parameter
Rating
Unit
V_GDO Gate to Drain Voltage
-8
V
V_GSO Gate to Source Voltage
-8
V
I_D Drain Current
120
mA
P_T Total Power Dissipation
300
mW
T_ch Channel Temperature
125
°C
T_stg Storage Temperature
-65 to +125 °C
Keep Safety first in your circuit designs!
Mitsubishi Electric Corporation puts the
maximum effort into making semiconductor
products better and more reliable, but there is
always the possibility that trouble may occur
with them. Trouble with semiconductors may
lead to personal injury, fire or property
damage. Remember to give due
consideration to safety when making your
circuit designs, with appropriate measure
such as (i) placement of substitutive, auxiliary
circuits, (ii) use of non-flammable material or
(iii) prevention against any malfunction or
mishap.
ELECTRICAL CHARACTERISTICS (T_a=+25°C)
Symbol Parameter
Test Conditions
V_(BR)GDO
I_DSS
V_GS(off)
P_1dB
Gate to Drain Breakdown Voltage
Saturated Drain Current
Gate to Source Cut-off Voltage
Output Power at
1dB Gain Compression
I_G=-30µA
V_DS=3V, V_GS=0V
V_DS=3V, I_D=300µA
V_DS=3V, I_D=30mA, f=12GHz
G_LP Linear Power Gain
V_DS=3V, I_D=30mA, P_in=-5dBm,
f=12GHz
MIN TYP MAX Unit
-8 -15 —
V
35
60 120 mA
-0.3 -1.4 -3.5 V
11
13
— dBm
7
9
— dB
MITSUBISHI
(1/4)
1 Aug 2002