GVA-81 Datasheet, PDF (2/5 Pages) Mini-Circuits – Monolithic Amplifier

Monolithic InGaP HBT MMIC Amplifier
Electrical Specifications⁽¹⁾ at 25°C and 5V, unless noted
Parameter
Frequency Range⁽²⁾
Gain
Magnitude of Gain Variation versus Temperature ⁽³⁾
(values are negative)
Input Return Loss
Output Return Loss
Reverse Isolation
Output Power @1 dB compression
Output IP3
Noise Figure
Group Delay
Device Operating Voltage
Device Operating Current
Device Current Variation vs. Temperature
Device Current Variation vs. Voltage
Thermal Resistance, junction-to-ground lead
Condition
(GHz)
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
2.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
0.1
1.0
2.0
3.0
4.0
6.0
7.0
2.0
Min.
DC
9.5
8.8
7.5
14.0
12.0
17.5
17.5
17.5
32.0
4.8
93
Typ.
10.5
10.5
10.0
9.3
8.7
8.1
7.6
0.0005
0.0010
0.0016
0.0020
0.0025
0.0036
0.0063
38.0
27.0
20.1
17.4
16.9
18.5
14.3
21.4
20.6
17.4
14.5
13.1
14.8
13.2
20.8
19.1
19.1
19.7
19.7
19.4
17.7
17.7
42.0
38.3
36.6
35.0
33.2
31.1
31.1
7.3
7.3
7.4
7.6
7.7
8.3
8.9
98
5.0
103
62
0.036
65
(1) _{Measured on Mini-Circuits test board TB-313. See Characterization Test Circuit (Fig. 1)}
(2) _{Guaranteed specification DC*-7 GHz. *Low frequency cut off determined by external coupling capacitors and RF Choke (RFC).}
(3) _{(Gain at 85°C - Gain at -45°C)/130}
GVA-81+
Max.
7
11.5
11.0
10.0
Units
GHz
dB
0.005
dB/°C
dB
dB
dB
dBm
dBm
8.6
dB
9.0
psec
5.2
V
112
mA
µA/°C
mA/mV
°C/W
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