ZHL-100W-GAN Datasheet, PDF (1/1 Pages) Mini-Circuits – High Power Amplifier

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New Product Announcement!
High Power Amplifier
ZHL-100W-GAN+
50Ω 100W 20 to 500 MHz
The Big Deal
• High Efficiency, 50% typ.
• High Output Power, 100W
• GaN Output Stage
• High Output IP2, +84 dBm typ.
• High Output IP3, +60 dBm typ.
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here for
data sheet
ZHL-100W-GAN+
ZHL-100W-GANX+
Price $2395.00 (Qty. 1-9) Price $2320.00 (Qty. 1-9)
Product Overview
The Mini-Circuits ZHL-100W-GAN+ utilizes high power Galium Nitride (GaN) output stage, which results in
higher efficiency (50% typ.) as compared to GaAs, LDMOS and VDMOS counterparts.GaN FET’s boast a
maximum junction temperature of 250°C translating into higher operating temperatures without adversely
affecting the MTBF.
Key Features
Feature
High Efficiency
Advantages
Higher PAE results in significant cost savings over the operating life of amplifier.
Rugged Design
Extreme load mismatch such as open/short at output are tolerated without damaging the amplifiers.
Range of Protections
Over temperature, over voltage and reverse polarity protection add to the ruggedness of amplifier.
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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard
Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp.