CMM1100-BD_07 Datasheet, PDF (5/6 Pages) Mimix Broadband – 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier

2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
February 2007 - Rev 06-Feb-07
CMM1100-BD
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd1=Vd2=5V, I =105mA. Additionally there are six total source resistors on chip.The three resistors on the input
TOTAL
stage are 16.6, 29.0 and 29.0 Ohms. The three resistors on the output stage are 12.5, 12.5 and 9.0 Ohms. One of these must be bonded to
ground for each amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow
additional performance adjustment. Lastly for additional stability pad #3 can be grounded instead of bond pad #2.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD) (Thermal Resistance (Rth) is 60.0ºC/W)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
Channel
Temperature
Rth
MTTF Hours
FITs
55 deg Celsius
deg Celsius
C/W
E+
E+
75 deg Celsius
deg Celsius
C/W
E+
E+
95 deg Celsius
deg Celsius
C/W
E+
E+
Bias Conditions: Vd1,2=5.0V, I =105 mA
TOTAL
Device Schematic
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.