CMM0014-BD_07 Datasheet, PDF (5/6 Pages) Mimix Broadband – 2.0-22.0 GHz GaAs MMIC Power Amplifier

2.0-22.0 GHz GaAs MMIC
Power Amplifier
April 2007 - Rev 26-Apr-07
CMM0014-BD
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd=8V, Id=300 mA. For additional assistance in setting current via source resistor, see source resistance table below.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended. Additionally, to achieve the required broadband decoupling network a
high-Q Drain bias inductor with high-Q bypass capacitor is needed. The proper network is necessary in order to bring Drain bias into the
device with minimal impact on RF performance.The high-Q inductor is typically an air coil that can be purchased from an air coil
manufacturer (Microwave Components or Piconics for example). The air coil needs to have minimum current handling capability, thus
planned operating current needs to be defined and considered before defining actual air coil to be used. Mimix recommends 1.4 mil
diameter gold wire and 4 turns as a starting point and may need to be optimized based on the actual application. Self-resonance of the bias
inductor causes degradation in performance at both the low and high ends of the band.The self resonance is sensitive to spacing between
turns and number of turns used. For example, the more turns in the Drain bias inductor the lower the self-resonant frequency of the inductor
creating high end RF performance degradation.The opposite is true for a smaller number of turns.
CMM0014 - Source Resistance Table
Left
3.3
Center Corner
2.1
1.2
Net R
0
0
0
Infinity
1
0
0
3.30
0
1
0
2.10
1
1
0
1.28
0
0
1
1.20
1
0
1
0.88
0
1
1
0.76
1
1
1
0.62
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
1.0E+09
CMM0014-BD Vd=8.0 V, Id=280 mA
1.00E+01
CMM0014-BD Vd=8.0 V, Id=280 mA
1.0E+08
1.00E+00
1.0E+07
1.00E-01
1.0E+06
1.00E-02
1.0E+05
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
1.00E-03
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
170
160
150
140
130
120
110
100
90
55
CMM0014-BD Vd=8.0 V, Id=280 mA
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 5 of 6
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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