XR1004_06 Datasheet, PDF (4/7 Pages) Mimix Broadband – 30.0-46.0 GHz GaAs MMIC Receiver

30.0-46.0 GHz GaAs MMIC
Receiver
August 2006 - Rev 01-Aug-06
R1004
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1, Vd2 and Vd3 with
Vd(1,2,3)=4.0V, Id1=Id2=25mA and Id3=145mA. Additionally, a mixer and doubler bias are also required with Vg4=Vg5=-0.5V. Adjusting Vg4
and Vg5 above or below this value can adversely affect conversion gain, image rejection and intercept point performance. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible
results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low
power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is
protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is
available before applying the positive drain supply.
App Note [2] Bias Arrangement -
For Parallel Stage Bias (Recommended for general applications) -- The same as Individual Stage Bias but all the drain or gate pad DC bypass
capacitors (~100-200 pF) can be combined. Additional DC bypass capacitance (~0.01 uF) is also recommended to all DC or combination (if
gate or drains are tied together) of DC bias pads.
For Individual Stage Bias -- Each DC pad (Vd1,2,3 and Vg1,2,3,4,5) needs to have DC bypass capacitance (~100-200 pF) as close to the device
as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate
Temperature
55 deg Celsius
75 deg Celsius
95 deg Celsius
Channel
Temperature
deg Celsius
deg Celsius
deg Celsius
Rth
MTTF Hours
FITs
C/W
E+
E+
C/W
E+
E+
C/W
E+
E+
Bias Conditions: Vd1=Vd2=Vd3=4.0V, Id1=Id2=25 mA, Id3=145 mA
Typical Application
RF IN
37.0-39.5 GHz
XR1004
BPF
Coupler
IF Out
2 GHz
LNA
IR Mixer
Buffer
X2
AGC Control
LO(+2.0dBm)
17.5-18.75 GHz (USB Operation)
19.5-20.75 GHz (LSB Operation)
Mimix Broadband MMIC-based 30.0-46.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 46 GHz)
Mimix Broadband's 30.0-46.0 GHz XR1004 GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes
up to 128 QAM. The receiver can be used in upper and lower sideband applications from 30.0-46.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 4 of 7
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
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