CMM1100-BD_0704 Datasheet, PDF (4/5 Pages) Mimix Broadband – 2.0-18.0 GHz GaAs MMIC Low Noise Amplifier

2.0-18.0 GHz GaAs MMIC
Low Noise Amplifier
April 2007 - Rev 30-Apr-07
CMM1100-BD
App Note [1] Biasing - As shown in the bonding diagram, this device operates using a self-biased architecture and only requires one drain
bias. Bias is nominally Vd1=Vd2=5V, I(total)=105mA. Additionally there are six total source resistors on chip. The three resistors on the input
stage are 16.6, 29.0 and 29.0 Ohms. The three resistors on the output stage are 12.5, 12.5 and 9.0 Ohms. One of these must be bonded to
ground for each amplifier stage to achieve performance as shown. Bonding to one of the other resistors or any or all in parallel may allow
additional performance adjustment. Lastly for additional stability pad #3 can be grounded instead of bond pad #2.
App Note [2] Bias Arrangement - Each DC pad (Vd) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible.
Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Graphs
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
1.0E+09
CMM1100-BD Vd=5.0 V, Id=105 mA
1.00E+00
CMM1100-BD Vd=5.0 V, Id=105 mA
1.0E+08
1.0E+07
1.0E+06
1.00E-01
1.00E-02
1.0E+05
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
1.00E-03
55
65
75
85
95
105
115
125
Baseplate Temperature (deg C)
160
150
140
130
120
110
100
90
80
55
CMM1100-BD Vd=5.0 V, Id=105 mA
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 4 of 5
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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