CMM1331-SM Datasheet, PDF (2/3 Pages) Mimix Broadband – 12.7 to 13.5 GHz 1.5 Watt Power Amplifier

Advanced Product Specifications
October 2003
(1 of 2)
Features
❏ 32.0 dBm (Typ.) Saturated Output Power
❏ 32.0 dB (Typ.) Linear Gain
❏ Fully Matched
❏ Unconditionally Stable
❏ Low-Cost Surface Mount Package
❏ Optimum Thermal Dissipation
Applications
❏ Ku-Band VSAT Transmit Subsystems
CMM1331-SM
12.70 to 13.50 GHz
1.5 Watt Power Amplifier
Pin Functional Diagram
Vdd 1
GROUND 2
RF IN 3
GROUND 4
Vgg 5
10 Vdd
9 GROUND
8 RF OUT
7 GROUND
6 Vgg
Description
The CMM1331-SM is a four-stage pHEMT GaAs
MMIC power amplifier that is ideally suited for transmit
subsystems designed for Ku-Band VSAT applications. The
CMM1331-SM provides 32.0 dB linear gain and delivers
1.5 watts of output power at saturation operating from
12.70 to 13.50 GHz frequency.
The unconditional stability and internal matching
provides for reduction of external components making this
product a simple and low-cost solution. The low-cost, 6mm x
6mm x 1.6mm surface mount package offers the same excel-
lent RF and thermal properties as a typical flange package.
Electrical Characteristics (T = +25°C, Vdd = 7V, Idq = 770mA)
Parameter
Frequency Range
Output Power
Saturated Output Power
Output Power Variation
Linear Gain
Linear Gain Variation
Third Order Intercept Point
Input Reflection Coefficient
Output Reflection Coefficient
Gate Supply Voltage
Drain Current
Power Added Efficiency
Condition
@ 1dB compression
Pout at Pin = 5.0 dBm
Over operating frequency
Over operating frequency
Idq = 770 mA
At Saturation
At Saturation
Min
12.70
30.0
31.0
29.0
-1.1
22
Typ
31.0
32.0
1.0
32.0
36.0
-10.0
-7.0
-0.9
900
26
Max
13.50
1.5
35.0
2.0
-0.7
980
Units
GHz
dBm
dBm
dBm
dB
dB
dBm
dB
dB
Volt
mA
%
Electrical Specifications (TA = -40°C to +75°C)
Parameter
Saturated Output Power
Linear Gain
Stability
Condition
Variation from Room Temperature
Variation from Room Temperature
Min
Typ
Max
-0.5
-2.5
3.5
Unconditionally stable
Units
dBm
dB
Maximum Ratings (TA = -40°C to +75°C) Operation outside these limits can cause permanent damage.
Parameter
Drain Voltage (+Vdd)
Gate Voltage (Vgg)
Quiescent Current (Idq)
Gate Current (Ig)
Typ
8.5
-3.0
1000
5
Units
Volts
Volts
mA
mA
Parameter
RF Input Power (Pin)
Dissipated Power (Pdiss)
Storage Temperature
Operating Backside Temperature
Typ
7.0
7.2
-50 to +150
-40 to +75
Units
dBm
Watts
°C
°C
3236 Scott Boulevard
Santa Clara, California 95054
Phone: [phone]
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