CMM1200-BD Datasheet, PDF (2/6 Pages) Mimix Broadband – 2.0 to 6.0 GHz GaAs MMIC Low-Noise Amplifer

CMM1200-BD
2.0 to 6.0 GHz
GaAs MMIC
Low-Noise Amplifier
Advanced Product Information
May 2005 V1.5
(1 of 5)
Features
❏ Small Size: 1.60 x 1.55 x 0.076 mm
❏ Integrated On-Chip Drain Bias Coil
❏ Integrated On-Chip DC Blocking
❏ Single Bias Operation
❏ Directly Cascadable – Fully Matched, Novel
Feedback & Distributed Amplifier Design
❏ P1dB: 15.5 dBm @ 6 GHz, Typ.
❏ High Linear Gain: 17.5 dB Typ.
❏ Noise Figure: 3.3 dB Typ. @ 6 GHz
❏ pHEMT Technology
❏ Silicon Nitride Passivation
Chip Diagram
Specifications (TA = 25°C, Vdd = 5V) ¹
Parameters
Frequency Range
Linear Gain
Gain Variation (over operating frequency)
Power Output (@1 dB Gain Compression)
P1dB Variation (over operating frequency)
Saturated Output Power
Third Order Intercept Point (@ 6 GHz)
Second Order Intercept Point (@ 6 GHz)
Noise Figure (@6 GHz)
Input Return Loss ²
Output Return Loss ²
Current
Thermal Resistance
Stability
Notes: 1. Tested on Celeritek connectorized evaluation board.
2. Measured on wafer.
Units
GHz
dB
±dB
dBm
dBm
dBm
dBm
dBm
dB
dB
dB
mA
°C/W
Min
2.0
16.0
14.0
19.0
85
Unconditionally Stable
Typ
17.5
15.5
25.5
41.0
3.3
100
34.0
Max
6.0
2.0
1.0
23.0
3.8
-9.5
-12.0
115
Absolute Maximum Ratings ¹
Parameter
Rating
Drain Voltage
4.5V (min.) / 8.0V (max.)
Drain Current
150 mA
Continuous Power Dissipation
1.2 W
Input Power
10 dBm
Storage Temperature
-50°C to +150°C
Channel Temperature
175°C
Operating Backside Temperature ²
-40°C Min.
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 34) [°C].
3236 Scott Boulevard
Santa Clara, California 95054
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over ther-
mosonic bonding. For thermocompression bonding: Stage
Temperature: 250°C; Bond Tip Temperature: 150°C; Bonding
Tip Pressure: 18 to 40 gms depending on size of wire.
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