CFS0303-SB_07 Datasheet, PDF (2/17 Pages) Mimix Broadband – 0.1-10.0 GHz Low Noise, Medium Power pHEMT in a Surface Mount Plastic Package

0.1-10.0 GHz Low Noise, Medium Power
pHEMT in a Surface Mount Plastic Package
September 2007 - Rev 28-Sep-07
CFS0303-SB
Electrical Characteristics
Ta=25ºC, Typical device RF parameters measured in test system.
Parameters
Saturated Drain Current1
Pinch-off Voltage ¹
No RF, Quiescent Bias Current
Transconductance1
Gate to Drain Leakage Current
Gate Leakage Current
Noise Figure
Associated Gain ²
Output Third Order Intercept Point
1 dB Gain Compression Point ²
Test Conditions
Vds=1.5V, Vgs=0V
Vds=1.5V, Ids=10% of Idss
Vgs=0.45V, Vds=2V
Vds=2.5V. Gm=Idss/Vp
Vgd = 5
Vgd=Vgs= -4V
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=1000MHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
f=2GHz
Vds=2V, Ids=10mA
Vds=2V, Ids=20mA
Vds=3V, Ids=20mA
Vds=3V, Ids=60mA
Min
Typ
Max
Units
120
165
200
mA
-0.8
-0.65
-0.5
V
60
mA
190
250
mmho
250
µA
10
150
µA
0.3
dB
0.35
dB
0.3
0.7
dB
0.18
0.53
dB
0.4
dB
0.37
dB
0.4
0.8
dB
0.26
0.61
dB
19.7
dB
20.8
dB
21.1
dB
22.4
dB
13.1
14.6
16.1
dB
15.5
dB
15.7
dB
15.3
16.8
18.3
dB
22.5
dBm
24.5
dBm
24.0
26.5
dBm
32.0
dBm
23.0
dBm
25.5
dBm
24.5
27.0
dBm
32.5
dBm
12.5
dBm
12.5
dBm
14.0
16.0
dBm
17.0
dBm
12.5
dBm
12.5
dBm
14.0
16.0
dBm
17.0
dBm
Notes:
1. Guaranteed at wafer probe.
2. Measurements obtained at fixed tuned system.
1
Absolute Maximum Ratings
Parameter
Rating
Parameter
Rating
Drain-Source Voltage ²
+5.5 V
Drain Current ²
Idss ³ A
Gate-Source Voltage ²
-5.0 V
Total Pwr Dissipation 560 mW
Gate-Drain Voltage ²
-5.0 V
RF Input Power
17 dBm
Parameter
Channel Temperature
Storage Temperature
Thermal Resistance
Rating
+175ºC
-65ºC to +160ºC
98ºC/W
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage
2. Assumes DC quiescent conditions. RF OFF.
3. Vgs=0V
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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