CFB0301 Datasheet, PDF (2/4 Pages) Mimix Broadband – High Dynamic Range Low-Noise GaAs FET

CFB0301
Product Specifications
June 2002
(1 of 3)
Features
❏ Low-Noise Figure from 0.8 to 2.0 GHz
❏ High Gain
❏ High Intercept Point
❏ Highly Stable
❏ Easily Matched to 50Ω
❏ 70 mil Package
Applications
❏ Cellular Base Stations
❏ PCS Base Stations
❏ Industrial Data Networks
High Dynamic Range
Low-Noise GaAs FET
Description
Celeritek’s CFB0301 is a high performance GaAs
MESFET with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0301 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Electrical Specifications (TA = 25°C, 2 GHz)
Parameters
Conditions
Min
Vd = 2V, Id = 25 mA
Noise Figure ²
Associated Gain ²
@ Noise Figure
Pout ^{1, 3}
P-1
IP3 ³
+5 dBm POUT/Tone
Id ³
@ P-1
Vd = 4V, Id = 30 mA
Noise Figure ²
Associated Gain ²
Pout ^{1, 3}
IP3 ³
Id ³
@ Noise Figure
P-1
+5 dBm POUT/Tone
@ P-1
Vd = 4V, Id = 70 mA
Noise Figure ²
Associated Gain ²
@ Noise Figure
16
Pout ^{1, 3}
P-1
20
IP3 ³
+5 dBm POUT/Tone
32
Id ³
@ P-1
Transconductance
Vds = 2 V, Vgs = 0 V
70
Saturated Drain Current
Vds = 2 V, Vgs = 0 V
120
Pinchoff Voltages
Vds = 2 V, Ids = 1 mA
-2.5
Thermal Resistance
@ Tcase = 150°C liquid crystal test
Standard
Typ
Deviation ⁴ Max
0.6
16
15.0
24
35
0.7
17
20.5
30
56
0.8
0.08
0.9
17
0.4
21
0.4
34
0.9
77
140
150
180
-1.3
-0.5
200
Units
dB
dB
dBm
dBm
mA
dB
dB
dBm
dBm
mA
dB
dB
dBm
dBm
mA
mho
mA
V
°C/W
Notes: _{1. @ Tcase = 25°C. Derate 5 mW/°C for Tcase >25°C.}
2. Input matched for low noise.
3. Matched for power transfer.
3236 Scott Boulevard
Santa Clara, California 95054
4. Standard deviation based on 10 wafers randomly selected
and is provided as an estimate of the distribution only.
Trademarks are the property of their respected owners.
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