XR1004 Datasheet, PDF (1/7 Pages) Mimix Broadband – 30.0-46.0 GHz GaAs MMIC Receiver

30.0-46.0 GHz GaAs MMIC
Receiver
May 2005 - Rev 13-May-05
Features
Sub-harmonic Receiver
Chip Device Layout
R1004
Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise
figure of 3.5 dB and 18.0 dB image rejection across the band. This
Absolute Maximum Ratings
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO doubler and LO buffer
amplifer. The image reject mixer eliminates the need for a bandpass
filter after the LNA to remove thermal noise at the image frequency.
Supply Voltage (Vd)
+6.0 VDC
Supply Current (Id1,2), (Id3) 110, 180 mA
Gate Bias Voltage (Vg)
+0.3 VDC
The use of integrated LO doubler and LO buffer amplifier makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+5 dBm
-65 to +165 ^OC
-55 to MTTF Table³
MTTF Table³
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave Point-to-
Point Radio, LMDS, SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25^o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
Frequency Range (RF) Lower Side Band
Frequency Range (LO)
Frequency Range (IF)
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)²
LO Input Drive (PLO)
Image Rejection²
Noise Figure (NF)²
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)^1,2
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Gate Bias Voltage (Vg4,5) Mixer, Doubler
Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical)
Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical)
GHz
35.0
-
46.0
GHz
30.0
-
46.0
GHz
15.5
-
25.0
GHz
DC
-
4.0
dB
-
10.0
-
dB
-
9.0
-
dBm
-
+2.0
-
dBc
-
18.0
-
dB
-
3.5
-
dB
-
40.0/40.0
-
dBm
-
+4.0
-
VDC
-
+4.0 +5.5
VDC
-1.2
-0.3
+0.1
VDC
-1.2
-0.5
+0.1
mA
-
50
100
mA
-
145
165
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 and +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
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