XR1004-BD_09 Datasheet, PDF (1/7 Pages) Mimix Broadband – 30.0-46.0 GHz GaAs MMIC

30.0-46.0 GHz GaAs MMIC
Receiver
April 2009 - Rev 07-Apr-09
R1004-BD
Features
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
General Description
Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise
figure of 3.5 dB and 18.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive pHEMT
mixer and includes an integrated LO doubler and LO buffer amplifer.
The image reject mixer eliminates the need for a bandpass filter after
the LNA to remove thermal noise at the image frequency. The use of
integrated LO doubler and LO buffer amplifier makes the provision of
the LO easier than for fundamental mixers at these frequencies. I and Q
mixer outputs are provided and an external 90 degree hybrid is
required to select the desired sideband. This MMIC uses Mimix
Broadband’s GaAs PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part
with backside via holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach process. This device is
well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110, 180 mA
+0.3 VDC
+5 dBm
-65 to +165 ^OC
-55 to MTTF Table³
MTTF Table³
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25^o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz
35.0
-
46.0
Frequency Range (RF) Lower Side Band
GHz
30.0
-
46.0
Frequency Range (LO)
GHz
15.5
-
25.0
Frequency Range (IF)
GHz
DC
-
4.0
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)²
dB
-
10.0
-
dB
9.0
9.0
-
LO Input Drive (PLO)
Image Rejection²
Noise Figure (NF)²
dBm
-
+2.0
-
dBc
15.0
18.0
-
dB
-
3.5
4.0
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)^1,2
dB
dBm
-
40.0/40.0
-
-
+4.0
-
Drain Bias Voltage (Vd1,2,3)
VDC
-
+4.0 +5.5
Gate Bias Voltage (Vg1,2,3)
VDC
-1.2
-0.3
+0.1
Gate Bias Voltage (Vg4,5) Mixer, Doubler
VDC
-1.2
-0.5
+0.1
Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical)
mA
-
50
100
Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical)
mA
-
145
165
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 and +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
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