XR1004-BD Datasheet, PDF (1/7 Pages) Mimix Broadband – 30.0-46.0 GHz GaAs MMIC Receiver

30.0-46.0 GHz GaAs MMIC
Receiver
August 2007 - Rev 16-Aug-07
Features
Sub-harmonic Receiver
Integrated LNA, LO Doubler/Buffer, Image Reject Mixer
+4.0 dBm Input Third Order Intercept (IIP3)
+2.0 dBm LO Drive Level
9.0 dB Conversion Gain
3.5 dB Noise Figure
18.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
R1004-BD
Chip Device Layout
General Description
Mimix Broadband’s 30.0-46.0 GHz GaAs MMIC receiver has a noise
figure of 3.5 dB and 18.0 dB image rejection across the band. This
device is a three stage LNA followed by an image reject resistive
pHEMT mixer and includes an integrated LO doubler and LO buffer
amplifer. The image reject mixer eliminates the need for a bandpass
filter after the LNA to remove thermal noise at the image frequency.
The use of integrated LO doubler and LO buffer amplifier makes the
provision of the LO easier than for fundamental mixers at these
frequencies. I and Q mixer outputs are provided and an external 90
degree hybrid is required to select the desired sideband. This MMIC
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam lithography to ensure
high repeatability and uniformity.The chip has surface passivation to
protect and provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2), (Id3)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110, 180 mA
+0.3 VDC
+5 dBm
-65 to +165 ^OC
-55 to MTTF Table³
MTTF Table³
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25^o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz
35.0
-
46.0
Frequency Range (RF) Lower Side Band
GHz
30.0
-
46.0
Frequency Range (LO)
GHz
15.5
-
25.0
Frequency Range (IF)
GHz
DC
-
4.0
Input Return Loss RF (S11)
Small Signal Conversion Gain RF/IF (S21)²
dB
-
10.0
-
dB
-
9.0
-
LO Input Drive (PLO)
Image Rejection²
Noise Figure (NF)²
dBm
-
+2.0
-
dBc
-
18.0
-
dB
-
3.5
-
Isolation LO/RF @ LOx1/LOx2
Input Third Order Intercept (IIP3)^1,2
dB
dBm
-
40.0/40.0
-
-
+4.0
-
Drain Bias Voltage (Vd1,2,3)
VDC
-
+4.0 +5.5
Gate Bias Voltage (Vg1,2,3)
VDC
-1.2
-0.3
+0.1
Gate Bias Voltage (Vg4,5) Mixer, Doubler
VDC
-1.2
-0.5
+0.1
Supply Current (Id1,2) (Vd1,2=4.0, Vg=-0.3V Typical)
mA
-
50
100
Supply Current (Id3) (Vd3=4.0V,Vg=-0.3V Typical)
mA
-
145
165
(1) Measured using constant current.
(2) Measured using LO Input drive level of 0.0 and +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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