XR1002-QB Datasheet, PDF (1/10 Pages) Mimix Broadband – 18.0-30.0 GHz GaAs Receiver QFN, 7x7 mm

18.0-30.0 GHz GaAs Receiver
QFN, 7x7 mm
November 2006 - Rev 03-Nov-06
R1002-QB
Features
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
14.0 dB Conversion Gain
3.5 dB Noise Figure
25.0 dB Image Rejection
General Description
Mimix Broadband’s 18.0-30.0 GHz GaAs MMIC receiver has a 12.0 dB gain
control range, a noise figure of 3.5 dB and 25.0 dB image rejection across
the band. This device is a three stage LNA followed by a single transistor
"Tee" attenuator and an image reject fundamental resistive HEMT mixer.
Absolute Maximum Ratings
At high signal levels the radio AGC system can be used to reduce the
receiver gain improving the IIP3 providing for minimum distortion at
modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).
The image reject mixer eliminates the need for a bandpass filter after the
LNA to remove thermal noise at the image frequency. I and Q mixer
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
outputs are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The chip
has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Storage Temperature (Tstg) -65 to +165 ^OC
Operating Temperature (Ta) -55 to MTTF Table³
Channel Temperature (Tch) MTTF Table³
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25^o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz
18.0
-
30.0
Frequency Range (LO)
GHz
14.0
-
34.0
Frequency Range (IF)
GHz
DC
-
4.0
Input Return Loss RF (S11)
dB
-
10.0
-
Small Signal Conversion Gain RF/IF (S21)
dB
-
14.0
-
Attenuation
dB
0.0
-
12.0
LO Input Drive (PLO)
dBm +12.0 +15.0 +18.0
Image Rejection
dBc
15.0
25.0
-
Noise Figure (NF)
dB
-
3.5
-
Isolation LO/RF
dB
-
40.0
-
Input Third Order Intercept (IIP3)
dBm
-
+4.0
-
Drain Bias Voltage (Vd1,2)
VDC
-
+4.5 +5.5
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
VDC
-1.0
-0.5
0.0
Control Bias Voltage (Vg3)
VDC
-1.5
-1.2
0.0
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
mA
-
135
270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
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