XR1002-BD Datasheet, PDF (1/10 Pages) Mimix Broadband – 17.65-33.65 GHz GaAs MMIC Receiver

17.65-33.65 GHz GaAs MMIC
Receiver
April 2007 - Rev 05-Apr-07
Features
Fundamental High Dynamic Range Receiver
Integrated Gain Control
+4.0 dBm Input Third Order Intercept (IIP3)
13.0 dB Conversion Gain
3.0 dB Noise Figure
25.0 dB Image Rejection
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883 Method 2010
R1002-BD
Chip Device Layout
General Description
Mimix Broadband’s 17.65-33.65 GHz GaAs MMIC receiver has a 12.0 dB
R1002
gain control range, a noise figure of 3.0 dB and 25.0 dB image rejection
across the band. This device is a three stage LNA followed by a single
transistor "Tee" attenuator and an image reject fundamental resistive
Absolute Maximum Ratings
HEMT mixer. At high signal levels the radio AGC system can be used to
reduce the receiver gain improving the IIP3 providing for minimum
distortion at modulation schemes as high as 256 QAM (ETSI-see
Technical Note 1). The image reject mixer eliminates the need for a
bandpass filter after the LNA to remove thermal noise at the image
frequency. I and Q mixer outputs are provided and an external 90 degree
hybrid is required to select the desired sideband. This MMIC uses Mimix
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (RF Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
+6.0 VDC
300 mA
+0.3 VDC
0.0 dBm
-65 to +165 ^OC
-55 to MTTF Table³
Broadband’s 0.15 µm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect and provide a
rugged part with backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,
Channel Temperature (Tch) MTTF Table³
(1) Measured using constant current, 10dB attenuation and
-20dBm total input power.
(2) At minimum attenuation.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
SATCOM and VSAT applications.
Electrical Characteristics (Ambient Temperature T = 25^o C)
Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
GHz 17.65
-
33.65
Frequency Range (RF) Lower Side Band
GHZ 17.65
-
33.65
Frequency Range (LO)
GHz 13.65
-
37.65
Frequency Range (IF)
GHz
DC
-
4.0
Input Return Loss RF (S11)
dB
-
10.0
-
Small Signal Conversion Gain RF/IF (S21)
dB
9.5
13.0
-
Attenuation
dB
0.0
-
12.0
LO Input Drive (PLO)
dBm +12.0 +15.0 +18.0
Image Rejection
dBc
15.0
25.0
-
Noise Figure (NF)
dB
-
3.0
3.7
Isolation LO/RF
dB
-
40.0
-
Input Third Order Intercept (IIP3)
dBm
-
+4.0
-
Drain Bias Voltage (Vd1,2)
VDC
-
+4.5 +5.5
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)
VDC
-1.0
-0.5
0.0
Control Bias Voltage (Vg3)
VDC
-1.5
-1.2
0.0
Supply Current (Id) (Vd=4.5V, Vg=-0.5V Typical)
mA
-
135
270
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.