XP1080-QU Datasheet, PDF (1/6 Pages) Mimix Broadband – 37.0-40.0 GHz GaAs Power Amplifier QFN, 7x7mm

37.0-40.0 GHz GaAs Power Amplifier
QFN, 7x7mm
January 2010 - Rev 22-Jan-10
Features
Linear Power Amplifier
On-Chip Power Detector
Output Power Adjust
25.0 dB Small Signal Gain
+27.0 dBm P1dB Compression Point
+38.0 dBm OIP3
P1080-QU
General Description
Mimix Broadband’s four stage 37.0-40.0 GHz
packaged GaAs MMIC power amplifier has a small
signal gain of 25.0 dB with a +38.0 dBm Output
Third Order Intercept. The amplifier contains an
integrated, temperature compensated, on-chip
power detector. This MMIC uses Mimix
Broadband’s GaAs pHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity. The device comes in a RoHS compliant
7x7mm QFN Surface Mount Package offering
excellent RF and thermal properties. This device is
well suited for Millimeter-wave Point-to-Point
Radio, LMDS, SATCOM and VSAT applications.
Absolute Maximum Ratings^1,2
Supply Voltage (Vd)
+4.3V
Gate Bias Voltage (Vg)
-1.5V < Vg < 0V
Input Power (Pin)
15 dBm
Abs. Max. Junction/Channel Temp
See MTTF Graph 1
Max. Operating Junction/Channel Temp 175 ºC
Continuous Power Dissipation (Pdiss) at 85 ºC 7.0 W
Thermal Resistance (Tchannel=150 ºC) 12 ºC/W
Operating Temperature (Ta)
-40 to +85 ºC
Storage Temperature (Tstg)
-65 to +150 ºC
Mounting Temperature
See solder reflow profile
ESD Min. - Machine Model (MM)
Class A
ESD Min. - Human Body Model (HBM) Class 1A
MSL Level
MSL3
(1) Channel temperature directly affects a device's MTTF. Channel temperature should
be kept as low as possible to maximize lifetime.
(2) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <9V
Electrical Characteristics for 37 - 40 GHz
(Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output IMD3 with Pout (scl) = 14 dBm
Output IP3
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id1) (Vd=4.0V, Vg=-0.3V)
Units Min. Typ. Max.
GHz
37.0
-
40.0
dB
10.0
14.0
-
dB
4.0
8.0
-
dB
21.0
25.0
30.0
dB
-
+/-1.0
-
dB
-
50
-
dBm
-
27.0
-
dBc
43.0
48.0
-
dBm 35.5 +38.0
-
VDC
-
4.0
4.0
VDC
-1.0
-0.3
-0.1
mA
-
1000 1200
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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