XP1050-QJ_11 Datasheet, PDF (1/10 Pages) Mimix Broadband – 177.0-9.0 GHz Linear Power Amplifier

7.0-9.0 GHz Linear Power Amplifier
6x6mm QFN
January 2011 - Rev 06-Jan-11
Features
15.0 dB Small Signal Gain
48.0 dBm Third Order Intercept Point (OIP3)
35.0 dBm Saturated RF Power (Psat)
Integrated Power Detector
6x6mm QFN Package, RoHS Compliant
100% RF Testing
P1050-QJ
General Description
The XP1050-QJ is a packaged linear power amplifier
that operates over the 7.0-9.0 GHz frequency band.
The device provides 15.0 dB gain and 48 dBm
Output Third Order Intercept Point (OIP3) at 28 dBm
total output power. The packaged amplifier comes
in an industry standard, fully molded 6x6mm QFN
package and is comprised of a two stage power
amplifier with an integrated, temperature
compensated on-chip power detector. The device
includes on-chip ESD protection structures and DC
by-pass capacitors to ease the implementation and
volume assembly of the packaged part. The device
is manufactured in GaAs HFET device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance.The XP1050-QJ is well
suited for Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Absolute Maximum Ratings^1,2,3
Supply Voltage (Vd)
+8.5V
Supply Voltage (Vgg)
-3V
Supply Current (Id1)
600 mA
Supply Current (Id2)
1200 mA
Detector Pin (Vdet)
6V
Detector Ref Pin (Vref )
6V
Input Power (Pin)
+25 dBm
Abs. Max. Junction/Channel Temp
175 ºC
Max. Operating Junction/Channel Temp 160 ºC
Continuous Power Dissipation (Pdiss) at 85 ºC 11.2 W
Thermal Resistance (Tchannel=160 ºC) 6.8 ºC/W
Operating Temperature (Ta)
-40 to +85 ºC
Storage Temperature (Tstg)
-65 to +150 ºC
Mounting Temperature
See solder reflow profile
ESD Min. - Machine Model (MM)
Class A
ESD Min. - Human Body Model (HBM) Class 1A
MSL Level
MSL3
(1) Operation of this device above any one of these parameters may cause
permanent damage.
(2) Channel temperature directly affects a device’s MTTF. Channel temperature
should be kept as low as possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <17
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Small Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
P1dB
Psat
OIP3 @ 25 dBm Pout
PAE at Psat
Detector Power Range
Drain Bias Voltage (Vd)
Detector Bias Voltage (Vdet,ref )
Gate Bias Voltage (Vg1,2,3)
Quiescent Supply Current (Idq)
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
%
dBm
VDC
VDC
VDC
mA
Min.
7.0
-20.0
-2.0
Typ.
-
15.0
10.0
8.0
45.0
34.5
35.0
48.0
24.0
-
8.0
5.0
-1.0
1400
Max.
9.0
35.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2011 Mimix Broadband, Inc.
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