XP1039-QJ Datasheet, PDF (1/6 Pages) Mimix Broadband – 5.6-7.1 GHz Linear 4W Power Amplifier 6x6mm QFN

5.6-7.1 GHz Linear 4W Power Amplifier
6x6mm QFN
October 2009 - Rev 08-Oct-09
P1039-QJ
Features
16.5 dB Small Signal Gain
49 dBm Third Order Intercept Point (OIP3)
4W Saturated RF Power
Integrated Power Detector
6x6mm QFN Package, RoHS Compliant
100% RF Testing
General Description
The XP1039-QJ is a packaged linear power amplifier
that operates over the 5.6-7.1 GHz frequency band. The
device provides 16.5 dB gain and 49 dBm Output Third
Order Intercept Point (OIP3) with up to 4W of saturated
Absolute Maximum Ratings^1,2,3
Supply Voltage (Vd)
+8.5V
Supply Voltage (Vgg)
-2.5V
Supply Current (Id1)
600 mA
Supply Current (Id2)
1200 mA
RF power.The packaged amplifier comes in an industry Detector Pin (Vdet)
6V
standard, fully molded 6x6mm QFN package and is
Detector Ref Pin (Vref )
6V
comprised of a two stage power amplifier with an
Input Power (Pin)
+25 dBm
integrated, temperature compensated on-chip power
detector. The device includes on-chip ESD protection
structures and DC by-pass capacitors to ease the
implementation and volume assembly of the
packaged part. The XP1039-QJ provides an alternative
solution to discrete power FETS with the added
advantages of higher gain and linearity in a standard
QFN package. The device is well suited for
Abs. Max. Junction/Channel Temp
175 ºC
Max. Operating Junction/Channel Temp 160 ºC
Continuous Power Dissipation (Pdiss) at 85 ºC 11.2 W
Thermal Resistance (Tchannel=160 ºC) 6.8 ºC/W
Operating Temperature (Ta)
-40 to +85 ºC
Storage Temperature (Tstg)
-65 to +150 ºC
Mounting Temperature
See solder reflow profile
ESD Min. - Machine Model (MM)
Class A
ESD Min. - Human Body Model (HBM) Class 1A
Point-to-Point Radio, LMDS, SATCOM and VSAT
MSL Level
MSL3
applications.
(1) Operation of this device above any one of these parameters may cause
permanent damage.
(2) Channel temperature directly affects a device’s MTTF. Channel temperature
should be kept as low as possible to maximize lifetime.
(3) For saturated performance it recommended that the sum of (2*Vdd + abs(Vgg)) <17
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Small Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
P1dB
Psat
OIP3 @ 25 dBm Pout
OIP3 @ 28.5 dBm Pout
PAE at Psat
Detector Power Range
Drain Bias Voltage (Vd)
Detector Bias Voltage (Vdet,ref )
Gate Bias Voltage (Vg1,2,3)
Quiescent Supply Current (Idq)
Units _Min.
GHz
5.6
dB
15.5
dB
dB
dB
dBm _34.5
dBm
dBm
46
dBm
46
%
dBm
0.0
VDC
VDC
VDC
-2.0
mA
Typ.
-
16.5
10.0
8.0
45.0
35.5
36.0
50.0
49.0
24.0
-
8.0
5.0
-1.0
1400
Max.
7.1
19.0
35.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
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