XP1027-BD_10 Datasheet, PDF (1/11 Pages) Mimix Broadband – 27.0-31.0 GHz GaAs MMIC

27.0-31.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
P1027-BD
Features
Ka-Band 4 W Power Amplifier
Balanced Design Provides Good Input/Output Match
21.0 dB Small Signal Gain
+35.5 dBm Saturated Output Power
+43.0 dBm Output Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband's three stage 27.0-31.0 GHz GaAs MMIC
power amplifier has a small signal gain of 21.0 dB with
+35.5 dBm saturated output power. The device also
includes Lange couplers to achieve good input/output
return loss. This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC²
Supply Current (Id1,2,3)
325,825,1575 mA
Gate Bias Voltage (Vg)
+0.3 VDC
Input Power (Pin)
+25 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)¹ 175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)²
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)²
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.5V, Vg=-0.7V Typical)
(2) Measured on wafer pulsed.
Units Min. Typ. Max.
GHz
27.0
-
31.0
dB
-
20.0
-
dB
-
20.0
-
dB
-
21.0
-
dB
-
+/-1.0
-
dB
-
50.0
-
dBm
-
+34.5
-
dBm
-
+43.0
-
dBm
-
+35.5
-
VDC
-
+5.5 +5.8
VDC
-1.0
-0.7
0.0
mA
-
250
300
mA
-
625
750
mA
-
1185 1435
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 11
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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