XP1026-BD_10 Datasheet, PDF (1/10 Pages) Mimix Broadband – 27.0-32.0 GHz GaAs MMIC

27.0-32.0 GHz GaAs MMIC
Power Amplifier
January 2010 - Rev 25-Jan-10
Features
Ka-Band 2W Power Amplifier
21.0 dB Small Signal Gain
+33.0 dBm Saturated Output Power
+40.0 dBm Output Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
P1026-BD
Chip Device Layout
General Description
Mimix Broadband's three stage 27.0-32.0 GHz GaAs
MMIC power amplifier has a small signal gain of 21.0
dB with +33 dBm saturated output power. This MMIC
uses Mimix Broadband’s GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC²
Supply Current (Id1,2,3)
165,415,790 mA
Gate Bias Voltage (Vg)
+0.3 VDC
Input Power (Pin)
+22 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to 85 ºC
Channel Temperature (Tch)¹ 175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
(2) Under pulsed bias conditions, under CW Psat conditions
further reduction in max supply voltage (~0.5V) is
recommended.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)²
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)
Output Third Order Intercept Point (OIP3)
Saturated Output Power (Psat)²
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id2) (Vd=5.5V, Vg=-0.7V Typical)
Supply Current (Id3) (Vd=5.5V, Vg=-0.7V Typical)
(2) Measured on wafer pulsed
Units Min. Typ. Max.
GHz
27.0
-
32.0
dB
-
10.0
-
dB
-
15.0
-
dB
-
21.0
-
dB
-
+/-1.0
-
dB
-
50.0
-
dBm
-
+32.0
-
dBm
-
+40.0
-
dBm
-
+33.0
-
VDC
-
+5.5 +5.8
VDC
-1.2
-0.7
0.0
mA
-
100
150
mA
-
250
350
mA
-
550
750
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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