XP1003 Datasheet, PDF (1/6 Pages) Mimix Broadband – 27.0-35.0 GHz GaAs MMIC Power Amplifier

27.0-35.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
P1003
Features
Balanced Design Provides Good Input/Output Match
On-Chip Temperature Compensated Output
Power Detector
15.0 dB Small Signal Gain
+34.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
n
General Description
Mimix Broadband’s two stage 27.0-35.0 GHz GaAs
MMIC power amplifier is optimized for linear operation
with a third order intercept point of +34.0 dBm. The
tio _{Absolute Maximum Ratings}
device also includes Lange couplers to achieve good
input/output return loss and an on-chip temperature
compensated output power detector. This MMIC uses
Mimix Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and
gold metallization to allow either a conductive epoxy
c^{Supply Voltage (Vd)}
Supply Current (Id)
+6.0 VDC
950 mA
Gate Bias Voltage
+0.3 VDC
u^{Input Power (Pin)}
+15 dBm
Storage Temperature (Tstg) -65 to +165 ^OC
Operating Temperature (Ta) -55 to MTTF Table ⁴
dChannel Temperature (Tch) MTTF Table 4
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
or eutectic solder die attach process. This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
o _{SATCOM and VSAT applications.}
possible for maximum life.
r _{Electrical Characteristics (Ambient Temperature T = 25 oC)}
Parameter
p _{Frequency Range (f )}
- _{Input Return Loss (S11)}
Units Min. Typ. Max.
GHz
27.0
-
35.0
dB
-
12.0
-
Output Return Loss (S22)
Small Signal Gain (S21)
e _{Gain Flatness (∆S21)}
Reverse Isolation (S12)
r_{Output Power for 1 dB Compression (P1dB)2}
dB
-
18.0
-
dB
-
15.0
-
dB
-
+/-1.0
-
dB
-
35.0
-
dBm
-
+24.0
-
P^{Output Third Order Intercept Point (OIP3)1,2}
Drain Bias Voltage (Vd1,2,3,4)
Gate Bias Voltage (Vg1,2,3,4)
dBm
-
+34.0
-
VDC
-
+4.5 +5.5
VDC
-1.0
-0.7
0.0
Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical)
Detector (diff ) Output at 20 dBm³
mA
-
440
880
VDC
-
0.3
-
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6kΩ.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
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