XP1001 Datasheet, PDF (1/6 Pages) Mimix Broadband – 26.0-40.0 GHz GaAs MMIC Power Amplifier

26.0-40.0 GHz GaAs MMIC
Power Amplifier
May 2005 - Rev 05-May-05
P1001
Features
High Linearity Wideband Amplifier
On-Chip Temperature Compensated
Output Power Detector
Balanced Design Provides Good Input/Output Match
11.0 dB Small Signal Gain
+31.0 dBm Third Order Intercept (OIP3)
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s two stage 26.0-40.0 GHz GaAs MMIC
power amplifier is optimized for linear operation with a third
order intercept point of +31.0 dBm. The device also includes
Lange couplers to achieve good input/output return loss
and an on-chip temperature compensated output power
detector. This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect and
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 Vdc
700 mA
+0.3 Vdc
+14.0 dBm
-65 to +165 ^OC
-55 to MTTF Table⁴
MTTF Table ⁴
(4) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T=25^oC)
Parameter
Units
Frequency Range (f )
GHz
Input Return Loss (S11)
dB
Output Return Loss (S22)
dB
Small Signal Gain (S21)
dB
Gain Flatness (∆S21)
dB
Reverse Isolation (S12)
dB
Output Power for 1dB Compression (P1dB)²
dBm
Output Third Order Intercept Point (OIP3)^1,2
dBm
Drain Bias Voltage (Vd1,2,3,4) (Vd5 [Det], Rd=3-6KΩ)
Vdc
Gate Bias Voltage (Vg1,2,3,4)
Vdc
Supply Current (Id) (Vd=5.5V, Vg=-0.5V Typical)
mA
Detector (diff ) Output at 20dBm³
Vdc
(1) Measured at +17 dBm per tone output carrier level across the full frequency band.
(2) Measured using constant current.
(3) Measured with either Vd5=I.0V, or Vd5=5.5V and Rd=5.6KΩ.
Min.
26.0
-
-
-
-
-
-
-
-
-1.0
-
-
Typ.
-
18.0
18.0
11.0
+/-1.0
40.0
+21.0
+31.0
5.5
-0.5
430
0.28
Max.
40.0
-
-
-
-
-
-
-
5.6
0.0
650
-
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 6
Characteristic Data and Specifications are subject to change without notice. ©2004 Mimix Broadband, Inc.
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