XD1008-BD Datasheet, PDF (1/10 Pages) Mimix Broadband – 30 kHz - 40 GHz GaAs MMIC Distributed Amplifier

30 kHz - 40 GHz GaAs MMIC
Distributed Amplifier
March 2009 - Rev 19-Mar-09
Features
15 dB Gain
22.5 dBm P1dB at 22 GHz
4.5 dB Noise Figure at 26 GHz
Unconditional Stability over Temperature Range
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
D1008-BD
Chip Device Layout
General Description
Mimix Broadband’s 30 kHz - 40 GHz GaAs MMIC
distributed amplifier has a gain of 15 dB with a 4.5 dB
noise figure at 26 GHz. This MMIC uses Mimix
Broadband’s GaAs PHEMT device model technology,
and is based upon electron beam lithography to
ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged
part with backside via holes and gold metallization to
allow either a conductive epoxy or eutectic solder die
attach process. This device is well suited for
microwave, millimeter-wave, military, wideband and
instrumentation applications.
1
Absolute Maximum Ratings
Parameters/Conditions
Min.
Max.
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg1)
Gate Current (Ig1)
+10.0V
340 mA
-9.5V
-38 mA +1 mA
Gate Bias Voltage (Vg2)
Gate Current (Ig2)
CW Input Power (Pin)
Storage Temperature (Tstg)
-3.5V +4.0V
-20 mA
17 dBm
-65 ºC +165 ºC
Operating Temperature (Ta) -55ºC
Channel Temperature (Tch)
+150 ºC
(1) Absolute maximum ratings for continuous operation
unless otherwise noted.
Bias Settings
Parameter
Units
Drain Current (Id), V=7V, VG1=-2.5V*, VG2=open circuit mA
Drain Current (Id), V=4V, VG1=-2.5V*, VG2=open circuit mA
Drain Voltage (Vd)
V
Gate Bias (Vg1)
V
Gate Bias (Vg2)
V
*approximate
Min. Typ. Max.
Function
200
160
47
Supply drain current to device
Adjusted to set drain current
Adjusted for gain control
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
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