XD1004-QT Datasheet, PDF (1/5 Pages) Mimix Broadband – 10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN

10.0-40.0 GHz GaAs MMIC
Distributed Amplifier, QFN
February 2007 - Rev 08-Feb-07
Features
Ultra Wide Band Driver Amplifier
Self Biased Architecture
12.0 dB Small Signal Gain
6.0 dB Noise Figure
RoHS Compliant SMD, 3x3 mm QFN Package
100% RF, DC, and Output Power Testing
General Description
Mimix Broadband’s two stage 10.0-40.0 GHz GaAs
MMIC distributed amplifier has a small signal gain of
12.0 dB with a 6.0 dB noise figure across much of the
band. This MMIC uses Mimix Broadband’s 0.15 µm
GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high
repeatability and uniformity. The device comes in a
RoHS compliant 3x3mm QFN Surface Mount Package
offering excellent RF and thermal properties. This
device is well suited for Millimeter-wave
Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
D1004-QT
Absolute Maximum Ratings
Supply Voltage (Vd)
+6.0 VDC
Supply Current (Id)
175 mA
Input Power (Pin)
+17.0 dBm
Storage Temperature (Tstg) -65 to +165 ^OC
Operating Temperature (Ta) -55 to MTTF Graph¹
Channel Temperature (Tch) MTTF Graph¹
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
o
Electrical Characteristics (Ambient Temperature T = 25 C)
Parameter
Units _{Min. Typ. Max.}
Frequency Range (f )
GHz
10.0
-
40.0
Input Return Loss (S11)
dB
-
7.0
-
Output Return Loss (S22)
dB
-
7.0
-
Small Signal Gain (S21)
dB
-
12.0
-
Gain Flatness ( S21)
dB
-
+/-5.0
-
Reverse Isolation (S12)
dB
-
30.0
-
Noise Figure (NF)
Output Power for 1dB Compression (P1dB) ²
dB
-
6.0
-
dBm
-
TBD
-
Drain Bias Voltage (Vd)
VDC
-
+5.0 +5.5
Supply Current (Id) (Vd=5.0V)
mA
-
115
145
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
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