D1008-QH Datasheet, PDF (1/9 Pages) Mimix Broadband – 30.0 kHz-32.0 GHz GaAs MMIC

30.0 kHz-32.0 GHz GaAs MMIC
Distributed QFN Packaged Amplifier
December 2009 - Rev 08-Dec-09
Features
17 dB Small Signal Gain
24 dBm Saturated Power
3.0 dB Noise Figure
Unconditional Stability over Temperature Range
4x4mm Fully Molded Standard QFN Package
100% RF & DC Testing
D1008-QH
General Description
Mimix Broadband’s 30 kHz – 32 GHz MMIC
distributed amplifier has a gain of 17 dB and
provides 24 dBm saturated power with 3.0 dB
Noise Figure. The device comes in an RoHS
compliant 4x4mm QFN surface mount package
offering excellent RF and thermal properties. The
device’s broad bandwidth operation makes it very
versatile for microwave and millimeter applications
such as instrumentation, EW and commercial
communication systems.
Absolute Maximum Ratings
Supply Voltage (Vd1,2,3)
+10.0V
Gate Bias Voltage (Vg1,2,3)
-9.5V < Vg < 0V
Input Power (Pin)
+17 dBm
Abs. Max. Junction/Channel Temp. See MTTF Graph¹
Max.Operating Junction/Channel Temp. 150 ºC
ContinuousPowerDissipation(Pdiss)at85ºC 1.6W
Thermal Resistance
40 ºC/W
Operating Temperature (Ta)
-55 ºC to +85 ºC
Storage Temperature (Tstg)
-65 ºC to 165 ºC
Mounting Temperature
See solder reflow profile
ESD Min - Machine Model (MM)
Class A
ESD Min - Human Body Model (HBM) Class 1A
MSL Level
MSL3
(1) Channel temperature directly affects a device’s MTTF. Channel
temperature should be kept as low as possible to maximize lifetime.
Bias Settings
Parameter
Drain Current (Id)
Drain Voltage (Vd)
Gate Bias (Vg1)¹
Gate Bias (Vg3)²
Units Min.
mA
150
V
4.0
V
-5.0
Ohm GND
Typ. Max.
-
300
-
7.0
-
0.0
-
Open
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
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