CMM2030-BD_10 Datasheet, PDF (1/8 Pages) Mimix Broadband – 30.0 kHz-30.0 GHz GaAs MMIC

30.0 kHz-30.0 GHz GaAs MMIC
Distributed Amplifier
May 2010 - Rev 07-May-10
CMM2030-BD
Features
Ultra Wide Band Driver Amplifier
Low Gain Ripple
Positive Gain Slope
12.0 dB Small Signal Gain
+16.0 dBm P1dB Compression Point
+27.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
General Description
Mimix Broadband’s distributed 30 kHz-30 GHz GaAs
MMIC distributed amplifier has a small signal gain of
12.0 dB with a +16.0 dBm P1dB output compression
point. This MMIC uses Mimix Broadband’s GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process. This device is well suited for Test
Instrumentation, Military, Space, Microwave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
+12.0 VDC
Supply Current (Id)
375 mA
Gate Voltage (Vg)
-5V
Input Power (Pin)
+23.0 dBm
Storage Temperature (Tstg) -65 to +165 ºC
Operating Temperature (Ta) -55 to +85 ºC
Channel Temperature (Tch)¹ +175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Units _{Min. Typ. Max.}
Frequency Range (f )
GHz 0.00003
-
30.0
Input Return Loss (S11)³
dB
10.0
15.0
-
Output Return Loss (S22)³
dB
10.0
18.0
-
Small Signal Gain (S21)³
dB
9.0
12.0
-
Gain Flatness ( S21)
dB
-
+/-1.0
-
Reverse Isolation (S12)
dB
-
35.0
-
Output Power for 1dB Compression (P1dB)²
dBm
-
+16.0
-
Output Third Order Intermods (OIP3)²
dBm
-
+27.0
-
Saturated Output Power (Psat)²
dBm
-
+19.0
-
Drain Bias Voltage (Vd)
VDC
-
5.0
8.0
Gate Bias Voltage (Vg)
VDC
-1.5
-0.5
0.0
Supply Current (Id) (Vd=5.0V, Vg=-0.5V Typical)
mA
-
100
150
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
(2) Optional high power bias Vd=8.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.
(3) Unless otherwise indicated, Min./Max. over 2.0-30.0 GHz and biased at Vd=5.0V.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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