CMM2000-QT_10 Datasheet, PDF (1/11 Pages) Mimix Broadband – 1.5-6.0 GHz GaAs MMIC

1.5-6.0 GHz GaAs MMIC
Packaged Driver Amplifier
March 2010 - Rev 13-Mar-10
Features
13 dB Gain
14 dBm P1dB
3x3 QFN Package
Single Positve Supply
5-8 V, 35 mA Self Bias
RF Choke Inductors Integrated On-Chip
RoHS Compliant
CMM2000-QT
Circuit Description
Mimix Broadband’s 2 stage 1.5 to 6.0 GHz driver amplifier is
packaged in an RoHS compliant surface mount 3x3 QFN
package. The device is a self-biased, single supply design
with 13 dB gain and 14 dBm P1dB. This MMIC uses Mimix
Broadband’s MESFET process. The device is fully matched,
and RF choke inductors are integrated on-chip, so there is
no need for external matching components, and it can be
directly cascaded. Care must be taken to isolate the input
and output from external DC voltages.
Electrical Characteristics (T=25ºC, 8V)
Parameter
Frequency Range (f )
Gain (S21)
Input Return Loss (S11)
Output P1dB
Output IP3
Current (Id)
Output Return Loss (S22)
Noise Figure (NF)
Units Min.
GHz
1.5
dB
-
dB
-
dBm
8
dBm
20
mA
-
dB
-
dB
-
Absolute Maximum Ratings
Supply Voltage
+11 V
RF Input Power
+20 dBm
Storage Temperature (Tstg)
-55 ºC to +125 ºC
Junction Temperature
175 ºC
Operating Temperature
-40 ºC to +85ºC
Jc
60 ºC/W
Operating this device beyond any of these parameters may
cause permanent damage.
Typ. Max. Min. Typ. Max.
-
6
6.1
-
12
13
-
-
8
-
-12
-
-
-5
-
14
-
-
14
-
24
-
-
24
-
35
62
-
35
62
-10
-
-
-5
-
6
-
-
6
-
Typical Parameters (8V, 35 mA)
Parameter
Frequency (GHz)
Gain (dB)
IP Return Loss (dB)
Op Return Loss (dB)
P1dB (dBm)
OIP3 (dBm)
Noise Figure (dB)
Typical
2
4
6
8
10
12
13
13
11
8
7
6
-15
-12
-13
-8
-4
-6
-14
-13
-10
-6
-5
-10
14
14
14
15
15
14
24
24
24
26
26
24
6
6
6
6
6
6
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 11
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
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