CMM0014-BD_06 Datasheet, PDF (1/3 Pages) Mimix Broadband – 2.0-22.0 GHz GaAs MMIC Power Amplifier

2.0-22.0 GHz GaAs MMIC
Power Amplifier
August 2006 - Rev 02-Aug-06
2.0 to 22.0 GHz
GaAs MMIC
Power Amplifier
Advanced Product Information
August 2004
Chip Diagram
(1 of 3)
Features
Small Size: 45 x 92 mils
High Gain: 11.5 dB, Nom
Medium Power: +25 dBm, Typ P1dB @14 GHz
Directly Cascadable – Fully Matched
Unconditionally Stable
Single Bias Operation
Bias Control
pHEMT Technology
Silicon Nitride Passivation
CMM0014-BD
Specifications (TA = 25°C, Vdd = 8V)1
Parameters
Frequency Range
Small Signal Gain
Gain Flatness
Gain Variation (-40°C to +85°C)
Input Return Loss
Output Return Loss
Power Output (@1 dB Gain Compression) ¹
P1dB Variation (over operating frequency)
P1dB Variation (-40°C to +85°C)
Saturated Output Power
Second Order Intercept Point @ 10 GHz
Third Order Intercept Point @ 10 GHz
Noise Figure
Current
Thermal Resistance
Stability ²
Units
Min
Typ
Max
GHz
2.0
22.0
dB
10.0
13.5
±dB
0.8
±dB
0.35
dB
-10.0
dB
-9.0
dBm
22.5
dBm
4.5
±dBm
0.25
dBm
24.0
29.0
dBm
48.0
dBm
37.5
dB
7.5
mA
250
295
340
°C/W
33.0
Unconditionally Stable
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 3).
2. Stability factor measured on-wafer.
Absolute Maximum Ratings
Parameter
Drain Voltage
Drain Current
Continuous Power Dissipation
Input Power
Storage Temperature
Channel Temperature
Operating Backside Temperature
Rating
7V (min.) / 9V (max.)
350 mA
2.8 W
+20 dBm
-50°C to +150°C
+175°C
-40 to (see note 2)°C
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 33.0) [°C].
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
wire.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 3
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.