CFH2162-P1_09 Datasheet, PDF (1/2 Pages) Mimix Broadband – +36 dBm Power GaAs FET

0.8-1.0 GHz
+36 dBm Power GaAs FET
October 2009 - Rev 20-Oct-09
Features
High Gain
+36 dBm Power Output
Proprietary Power FET Process
>45% Linear Power Added Efficiency
+33 dBm with 30 dBc Third Order Products
Package Diagram
CFH2162-P1
Description
The CFH2162-P1 is a high-gain, linear FET intended for driver
amplifier applications in high-power systems, and output
stage usage in medium power applications at power levels
up to +36 dBm. The device is easily matched and provides
excellent linearity at 4 Watts. Manufactured in Mimix’s power
FET process, this device is assembled in a power flange
package.
Specifications (TA = 25 ºC)
The following specifications are guaranteed at room
temperature in Mimix test fixture at 850 MHz.
Absolute Maximum Ratings
Drain-Source Voltage (Vds)
15V⁽³⁾
Gate-Source Voltage (Vgs)
-5V
Drain Current (Ids)
Idss
Continuous Dissipation (Pt)
10W
Channel Temperature (Tch)
175 ºC
Storage Temperature (Tstg)
-65 ºC to +175 ºC
Notes:
1. Sum to two tones with 1 MHz spacing = 33 dBm.
2. See thermal considerations information.
3. Maximum potential difference across the device (Vd + Vg) cannot
exceed 18V.
Applications
ISM Band Base Stations
Cellular Base Stations
Wireless Local Loop
Power Flange Package
Physical Dimensions
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2009 Mimix Broadband, Inc.
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