CF001-01_08 Datasheet, PDF (1/3 Pages) Mimix Broadband – GaAs MESFET Transistor

GaAs MESFET Transistor
March 2008 - Rev 15-Mar-08
Features
High Gain: Usable to 44 GHz
P1dB Power: 21 dBm
Wfer Qualification Procedure
Customer Wafer Selection Available
General Description
Mimix CF001-01 GaAs-based transistor is a 300 um gate
width, sub-half-micron gate length GaAs device with Silicon
Nitride passivation. The CF001-01 provides high gain up to
26 GHz. It is suitable for general purpose and driver
amplifier applications with up to +21 dBm power from a
single FET. This device can also be used in oscillator
applications. The CF001-01 is available in chip form and is
suitable for airborne, shipboard and ground-based
equipment. The devices are 100% DC tested and every
wafer is qualified based on sample RF and reliability testing.
Screening includes MIL-STD-750 Class B, Class S and
commercial screening. These devices are also available in
packaged form. Please consult the CFB0101-B, CFA0101-A
datasheets or contact the factory for further information.
CF001-01
12.0
21.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 3
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
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