B1005-BD_08 Datasheet, PDF (1/12 Pages) Mimix Broadband – 35.0-45.0 GHz GaAs MMIC

35.0-45.0 GHz GaAs MMIC
Buffer Amplifier
October 2008 - Rev 02-Oct-08
B1005-BD
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
23.0 dB Small Signal Gain
2.7 dB Noise Figure at Low Noise Bias
+16 dBm P1dB Compression at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Commercial-Level Visual Inspection Using
Mil-Std-883 Method 2010
Chip Device Layout
General Description
Mimix Broadband’s three stage 35.0-45.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a noise figure of 2.7 dB across the band. This
MMIC uses Mimix Broadband’s GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes
and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process. This
device is well suited for Millimeter-wave
Point-to-Point Radio, SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+5 dBm
-65 to +165 ^OC
-55 to MTTF Table⁵
MTTF Table⁵
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 ^oC)
Parameter
Frequency Range (f )
Input Return Loss (S11) ³
Output Return Loss (S22) ³
Small Signal Gain (S21) ³
Gain Flatness ( S21)
Reverse Isolation (S12) ³
Noise Figure (NF) ⁴
Output Power for 1 dB Compression (P1dB) ^1,2,3
Output Third Order Intercept Point (OIP3)^1,2,3
Saturated Output Power (Psat)^1,2,3
Drain Bias Voltage (Vd1,2,3)
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id) (Vd=3.5V, Vg=-0.4V Typical)
Units
GHz
dB
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
35.0
4.0
9.0
20.0
-
35.0
-
-
-
+16.0
-1.2
-
Typ.
-
8.0
17.0
23.0
+/-1.0
45.0
2.7
+16.0
+26.0
+18.0
+3.5
-0.4
50
Max.
45.0
-
-
27.0
-
-
3.5
-
-
-
+4.5
+0.1
154
(1) Optional low noise bias Vd1,2,3=3.5V, Id=50mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=4.5V, Id1=28mA, Id2=42mA, Id3=84mA.
(4) Unless otherwise indicated Min/Max over 35.0-45.0 GHz and biased at Vd=3.5V, Id1=9mA, Id2=16mA, Id3=25mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 12
Characteristic Data and Specifications are subject to change without notice. ©2008 Mimix Broadband, Inc.
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