27TRX0357 Datasheet, PDF (1/7 Pages) Mimix Broadband – 27.0-36.0 GHz GaAs MMIC Transmitter

27.0-36.0 GHz GaAs MMIC
Transmitter
May 2005 - Rev 20-May-05
Features
27TRX0357
Chip Device Layout
Sub-harmonic Transmitter
Integrated IR Mixer, LO Buffer & Output Amplifier
+20.0 dBm Output Third Order Intercept (OIP3)
2.0 dBm LO Drive Level
20.0 dB Image Rejection, 9.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s 27.0-36.0 GHz GaAs MMIC transmitter has a
n
+20.0 dBm output third order intercept and 20.0 dB image
rejection across the band. This device is an image reject sub-
harmonic anti-parallel diode mixer followed by a three stage
output amplifier and includes an integrated LO buffer amplifier.
The image reject mixer reduces the need for unwanted
sideband filtering before the power amplifier. The use of a sub-
io _{Absolute Maximum Ratings}
t _{Supply Voltage (Vd)}
+4.5 VDC
harmonic mixer makes the provision of the LO easier than for
fundamental mixers at these frequencies. I and Q mixer inputs
are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s
0.15 µm GaAs PHEMT device model technology, and is based
upon electron beam lithography to ensure high repeatability
c^{Supply Current (Id1,Id2)}
Gate Bias Voltage (Vg)
Input Power (IF Pin)
u^{Storage Temperature (Tstg)}
Operating Temperature (Ta)
320, 190 mA
+0.3 VDC
0.0 dBm
-65 to +165 ^OC
-55 to MTTF Table³
d ^{and uniformity.The chip has surface passivation to protect and}
provide a rugged part with backside via holes and gold
metallization to allow either a conductive epoxy or eutectic
Channel Temperature (Tch) MTTF Table³
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
solder die attach process. This device is well suited for
possible for maximum life.
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
ro _{Electrical Characteristics (Ambient Temperature T = 25o C)}
Parameter
Frequency Range (RF) Upper Side Band
p _{Frequency Range (RF) Lower Side Band}
- _{Frequency Range (LO)}
Frequency Range (IF)
Output Return Loss RF (S22)
e _{Small Signal Conversion Gain IF/RF (S21)2}
r_{LO Input Drive (PLO)}
Image Rejection ²
Units Min. Typ. Max.
GHz
27.0
-
36.0
GHz
27.0
-
36.0
GHz
12.0
-
19.5
GHz
DC
-
3.0
dB
-
15.0
-
dB
-
9.0
-
dBm
-
+2.0
-
dBc
-
20.0
-
P^{Isolation LO/RF @ LOx1/LOx2}
Output Third Order Intercept (OIP3)^1,2
Drain Bias Voltage (Vd1,2)
dB
-
10.0
-
dBm
-
+20.0
-
VDC
-
+4.0 +4.5
Gate Bias Voltage (Vg1,2,3)
VDC
-1.2
-0.3
+0.1
Supply Current (Id1) (Vd1=4.0V, Vg=-0.3V Typical)
mA
-
230
280
Supply Current (Id2) (Vd2=4.0V, Vg=-0.3V Typical)
mA
-
140
170
(1) Measured using constant current.
(2) Measured using LO Input drive level of +2.0 dBm.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
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