26TX0555 Datasheet, PDF (1/9 Pages) Mimix Broadband – 18.0-36.0 GHz GaAs MMIC Transmitter

18.0-36.0 GHz GaAs MMIC
Transmitter
August 2005 - Rev 04-Aug-05
Features
26TX0555
Chip Device Layout
Sub-harmonic Transmitter
Integrated Mixer, LO Doubler/Buffer & Output Amplifier
+25.0 dBm Output Third Order Intercept (OIP3)
35.0 dB Gain Control
2.0 dBm LO Drive Level
9.0 dB Conversion Gain
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s 18.0-36.0 GHz GaAs MMIC transmitter has a +25.0
dBm output third order intercept across the band. This device is a
balanced resistive pHEMT mixer followed by a distributed amplifier
and includes an integrated LO doubler and LO buffer amplifier. The use
of integrated LO doubler and LO buffer amplifier makes the provision
n
Absolute Maximum Ratings
io _{SupplyVoltage (Vd)}
t _{Supply Current (Id1,2,3)}
+6.0 VDC
320,190,110 mA
of the LO easier than for fundamental mixers at these frequencies. IF
and IF mixer inputs are provided through an external 180 degree
hybrid. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT
device model technology, and is based upon electron beam
lithography to ensure high repeatability and uniformity. The chip has
surface passivation to protect and provide a rugged part with backside
c^{Gate Bias Voltage (Vg)}
Input Power (IF Pin)
Storage Temperature (Tstg)
u^{Operating Temperature (Ta)}
Channel Temperature (Tch)
+0.3 VDC
0.0 dBm
-65 to +165 ^OC
-55 to MTTF Table³
MTTF Table³
via holes and gold metallization to allow either a conductive epoxy or
(1) Measured using constant current.
eutectic solder die attach process. This device is well suited for
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
applications.
d(2) Measured using LO Input drive level of +2.0 dBm.
(3) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25^o C)
o _Parameter
Units Min. Typ. Max.
r _{Frequency Range (RF) Upper Side Band}
GHz
18.0
-
36.0
Frequency Range (RF) Lower Side Band
GHz
18.0
-
36.0
Frequency Range (LO)
Frequency Range (IF)
p _{Output Return Loss RF (S22)}
- _{Small Signal Conversion Gain IF/RF (S21)2}
GHz
8.0
-
19.5
GHz
DC
-
3.0
dB
-
14.0
-
dB
-
9.0
-
LO Input Drive (PLO)
Isolation LO/RF @ LOx1
e _{Isolation LO/RF @ LOx2}
r_{Output Third Order Intercept (OIP3)1,2}
dBm
-
+2.0
-
dB
-
15.0
-
dB
-
5.0
-
dBm
-
+25.0
-
P^{Drain Bias Voltage (Vd1,2,3)}
Source Bias Voltage (Vss)
Gate Bias Voltage (Vg1,2)
VDC
-
+5.0 +5.5
VDC
-
-5.0
-
VDC
-1.2
-0.2
+0.1
Gate Bias Voltage (Vg3,4) Doubler, Mixer
VDC
-1.2
-0.5
+0.1
Supply Current (Id1) (Vd1=5.0V, Vg=-0.2V Typical)
mA
-
230
280
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
mA
-
140
170
Supply Current (Id3) (Vd3=5.0V, Vg=-0.5V Typical)
Supply Current (Iss) (Vss=-5.0V)
mA
-
mA
-
75
90
50
60
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
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