14TX0614 Datasheet, PDF (1/8 Pages) Mimix Broadband – 10.0-18.0 GHz GaAs MMIC Transmitter

10.0-18.0 GHz GaAs MMIC
Transmitter
September 2005 - Rev 01-Sep-05
14TX0614
Features
Integrated Mixer, LO Buffer and Output Amplifier
8 dB Conversion Gain
15 dB Image Rejection
+17 dBm OIP3
+6 dBm LO Drive Level
-12 dBm LO Leakage Power
100% On-Wafer RF and DC Testing
100% Visual Inspection to MIL-STD-883 Method 2010
Chip Device Layout
n
General Description
Mimix Broadband's 10.0-18.0 GHz GaAs MMIC transmitter provides +17
dBm output third order intercept and 15 dB image rejection across the
band. This device is an image reject, balanced mixer followed by a two
tio Absolute Maximum Ratings
stage output amplifier. The image reject mixer reduces the need for
unwanted sideband filtering before the power amplifier. I and Q mixer
inputs are provided and an external 90 degree hybrid is required to
select the desired sideband. This MMIC uses Mimix Broadband’s 0.15
µm GaAs PHEMT device model technology, and is based upon electron
beam lithography to ensure high repeatability and uniformity. The chip
has surface passivation to protect and provide a rugged part with
c^{Supply Voltage (Vd)}
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
u^{Input Power (IF Pin)}
Storage Temperature (Tstg)
Operating Temperature (Ta)
+6.0 VDC
250,150,250 mA
+0.3 VDC
0.0 dBm
-65 to +165 ^OC
-55 to MTTF Table¹
d ^{backside via holes and gold metallization to allow either a conductive}
epoxy or eutectic solder die attach process. This device is well suited
for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
Channel Temperature (Tch) MTTF Table¹
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
applications.
possible for maximum life.
o _{Electrical Characteristics (Ambient Temperature T = 25o C)}
r_Parameter
Units Min. Typ. Max.
Frequency Range (RF) Upper Side Band
Frequency Range (LO)
p _{Frequency Range (IF)}
- _{Output Return Loss RF (S22)}
Small Signal Conversion Gain IF/RF (S21)
LO Input Drive (PLO)
Isolation LO/RF
e _{Output Third Order Intercept (OIP3)}
r_{Drain Bias Voltage (Vd1,2,3)}
GHz
10.0
-
18.0
GHz
7.0
-
21.0
GHz
DC
-
3.0
dB
-
18.0
-
dB
-
9.0
-
dBm
-
+6.0
-
dB
-
18.0
-
dBm
-
+17.0
-
VDC
-
+5.0 +5.5
P^{Source Bias Voltage (Vs1)}
Gate Bias Voltage (Vg1), Mixer
Gate Bias Voltage (Vg2,3)
VDC
-
-5.0
-
VDC
-
-0.6
-
VDC
-1.2
-0.1
+0.1
Supply Current (Id1) (Vd1=5.0V)
mA
-
140
200
Supply Current (Id2) (Vd2=5.0V, Vg=-0.1V Typical)
mA
-
70
100
Supply Current (Id3) (Vd3=5.0V, Vg=-0.1V Typical)
mA
-
140
200
Supply Current (Iss) (Vss=-5.0V)
mA
-
140
200
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: [phone] Fax: [phone] mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
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