HMC499 Datasheet, PDF (8/9 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC MEDIUM POWER AMPLIFIER, 21 - 32 GHz

v03.0908
HMC499
GaAs PHEMT MMIC MEDIUM
POWER AMPLIFIER, 21 - 32 GHz
3
Pad Descriptions
Pad Number
Function
1
RFIN
2-4
Vdd1, 2, 3
5
RFOUT
6
Vgg
Description
This pad is AC coupled
and matched to 50 Ohms
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 μF are required.
This pad is AC coupled
and matched to 50 Ohms.
Gate control for amplifier. Adjust to achieve Idd of 200 mA.
Please follow “MMIC Amplifier Biasing Procedure”
Application Note. External bypass capacitors of 100 pF
and 0.01 μF are required.
Die Bottom
GND
Assembly Diagram
Die bottom must be connected to RF/DC ground.
Interface Schematic
3 - 60
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