HMC498 Datasheet, PDF (8/9 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 17 - 24 GHz

v03.0713
HMC498
GaAs pHEMT MMIC
POWER AMPLIFIER, 17 - 24 GHz
Pad Descriptions
Pad Number
Function
1
RFIN
Description
This pad is AC coupled and matched to 50 Ohms.
Interface Schematic
2-4
Vdd1, Vdd2, Vdd3
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.01 µF are required.
5
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Gate control for amplifier. Adjust to achieve Idd of 250mA.
6
Vgg
Please follow “MMIC Amplifier Biasing Procedure” Appli-
cation Note. External bypass capacitors of 100 pF and 0.01
µF are required.
Die Bottom
GND
Assembly Diagram
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
Phone: [phone] Fax: [phone] Order On-line at www.hittite.com
Application Support: Phone: [phone] or [e-mail]