HMC460 Datasheet, PDF (8/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC LOW NOISE AMPLIFIER, DC - 20.0 GHz

Pad Descriptions
Pad Number
Function
1
RFIN
v05.0612
HMC460
GaAs pHEMT MMIC LOW NOISE
AMPLIFIER, DC - 20 GHz
Description
This pad is DC coupled
and matched to 50 Ohms.
Interface Schematic
2
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
3
ACG1
Low frequency termination. Attach bypass capacitor per
application circuit herein.
4
RFOUT
This pad is DC coupled
and matched to 50 Ohms.
5
ACG2
Low frequency termination. Attach bypass capacitor per
application circuit herein.
6
Die
Bottom
Vgg
Gate control for amplifier. Adjust to achieve Idd= 60 mA.
GND
Die bottom must be connected to RF/DC ground.
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
5
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Application Support: Phone: [phone] or [e-mail]