HMC486 Datasheet, PDF (7/11 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC 2 WATT POWER AMPLIFIER, 7.0 - 9.0 GHz

v03.0109
HMC486
GaAs PHEMT MMIC 2 WATT
POWER AMPLIFIER, 7 - 9 GHz
Power Dissipation
10.5
Max Pdiss @ +85C
10
9.5
9
8.5
8
8 GHz
7.5
7
-10
-6
-2
2
6
10
14
18
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg)
RF Input Power (RFIN)(Vdd = +7 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 105 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+8 Vdc
-2 to 0 Vdc
+15 dBm
175 °C
9.45 W
9.5 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
3
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
+6.5
1305
+7.0
1300
+7.5
1295
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 1300 mA at +7.0V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com
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