AS8E128K32 Datasheet, PDF (7/15 Pages) Austin Semiconductor – 128K x 32 EEPROM Memory Array

EEPROM
AS8E128K32
PAGE MODE CHARACTERISTICS
Symbol
t_AS, t_OES
t_AH
t_CS
t_CH
t_WP
t_DS
t_DH, t_OEH
Parameter
Min
Address, OE\ Set-Up time
4
Address, Hold time
50
Chip Select Set-up Time
0
Chip Select Hold Time
0
Write Pulse Width (WE\ or CE\)
100
Data Set-up Time
50
Data, OE\ Hold Time
10
Max
Unit
ns
ns
ns
ns
ns
ns
ns
PAGE MODE WRITE WAVEFORMS^(1,2)
OE
CE\
WE\
A0 - A16
t_tAASS ^ttAAHH
VA
DATA
VD
BYTE 0
t^tWWPP
VA
VA
t_tDDSS
t^tDDHH
VD
BYTE 1
t_tWWPPHH
VA
VD
BYTE 2
VA
VD
BYTE 3
t^tBBLLCC
VA
VA
VD
BYTE 126
VD
BYT^VE^D 127
NOTES: 1. A7 through A16 must specify the page address during each high to low transition of WE\ (or CE\).
2. OE\ must be high only when WE\ and CE\ are both low.
3. VD - Valid Data
4. VA - Valid Address
t_tWWCC
VD
VIH
t_S = 5 msec (min.)
t_W = tH = 10 msec (min.)
V_H = 12.0V + 0.5V
CE\
VIL
VH
OE\
VIH
VIH
WE\
VIL
AS8E128K32
Rev. 8.2 07/10
CHIP ERASE WAVEFORMS
t_S
t_H
t_W
Micross Components reserves the right to change products or specifications without notice.
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