HMC464 Datasheet, PDF (6/9 Pages) Hittite Microwave Corporation – GaAs PHEMT MMIC POWER AMPLIFIER, 2.0 - 20.0 GHz

v04.0308
HMC464
GaAs PHEMT MMIC
POWER AMPLIFIER, 2 - 20 GHz
3
Output P1dB vs. Temperature
30
28
26
24
22
20
+25C
18
+85C
16
-55C
14
12
10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Output IP3 vs. Temperature
36
32
28
24
+25C
+85C
-55C
20
16
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Output Psat vs. Temperature
30
26
22
+25C
18
+85C
-55C
14
10
0 2 4 6 8 10 12 14 16 18 20 22
FREQUENCY (GHz)
Gain, Power & Output IP3
vs. Supply Voltage @ 10 GHz, Fixed Vgg
32
30
28
26
24
22
Gain
20
P1dB
Psat
18
IP3
16
14
12
10
7.5
8
8.5
Vdd SUPPLY VOLTAGE (V)
3 - 38
Absolute Maximum Ratings
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
Gate Bias Voltage (Vgg1)
Gate Bias Voltage (Vgg2)
RF Input Power (RFIN)(Vdd = +8 Vdc)
Channel Temperature
Continuous Pdiss (T= 85 °C)
(derate 51.5 mW/°C above 85 °C)
Thermal Resistance
(channel to die bottom)
Storage Temperature
Operating Temperature
ESD Sensitivity (HBM)
+9 Vdc
-2 to 0 Vdc
(Vdd -8) Vdc to Vdd
+20 dBm
175 °C
4.64 W
19.4 °C/W
-65 to +150 °C
-55 to +85 °C
Class 1A
Vdd (V)
+7.5
+8.0
+8.5
Idd (mA)
292
290
288
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Die Packaging Information ^[1]
Standard
Alternate
GP-1 (Gel Pack)
[2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: [phone] Fax: [phone]
Order On-line at www.hittite.com