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ASJE1700R550 Datasheet, PDF (5/7 Pages) Micross Components – Hermetic TO-258 Packaging
ADVANCE INFORMATION SiC JFET
ASJE1700R550
Figure 13. Switching Energy Losses
Es = f(ID); VDS = 850V; VGD = +15V, RGEXT = 20ohm; TC = 25oC
120
100
80
Ets
60
Eon
40
Eoff
20
0
1
2
3
4
ID, Drain Current (A)
Figure 14. Inductive Load Switching Circuit
ASJE1700R550
Rev. 0.1 06/11
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