MIMMK90A160UA Datasheet, PDF (4/5 Pages) Micross Components – 1600V 90A thyristor Module RoHS Compliant

350
300
180^○
120^○
250
90^○
60^○
30^○
200
150 ^{Conduction angle}
100
50
Per module
TJ=125℃
0
0 40 80 120 160 200 240
Total RMS Output Current (A)
Figure 7. On-State Power Loss Characteristics-1
1000
100
TJ=25℃
TJ=130℃
10
MIMMK90A160UA
350
300
RTHSA=0.1K/W-Delta R
0.2K/W
250
0.3K/W
200
0.4K/W
0.7K/W
150
1K/W
100
2K/W
50
0 _{0 20 40 60 80 100 120 140}
Maximum Allowable Ambient Temperature (℃)
Figure.8 On-State Power Loss Characteristics-2
1
Steady State Value:
RTHJC=0.35K/W
(DC Operation)
0.1
Per junction
1
0
1
2
3
Instantaneous On-state Voltage (V)
Figure.9 On State Voltage Drop Characteristics
100 _{Rectangular gate pulse}
a)Recommended load line
for rated di/dt:20V, 20Ω
tr =0.5μs, tp≥6μs
b)Recommended load line
10 ^{for ≤30% rated di/dt:15V,}
40Ω
(a)
(b)
TJ=-40℃
TJ=25℃
1
TJ=125℃
VGD
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Figure.10 Thermal Impedance ZthJC Characteristics
(1) PGM = 200 W, tp = 300s
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
(4) (3) (2) (1)
0.1
0.001
IGD
0.01
Frequency Limited by PG(AV)
0.1
1
10
Instantaneous Gate Current (A)
Figure.11 Gate Characteristics
100
1000