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| MIMMG25H120XB6TN Datasheet, PDF (4/8 Pages) Micross Components – 1200V 25A PIM Module RoHS Compliant | |||
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MIMMG25H120XB6TN
BRAKE-CHOPPER SECTOR
ELECTRICAL AND THERMAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
IGBT
VGE(th) Gate - Emitter Threshold Voltage VCE=VGE, IC=0.6mA
VCE(sat)
Collector - Emitter
Saturation Voltage
IC=15A, VGE=15V, TVj=25°C
IC=15A, VGE=15V, TVj=125°C
ICES
Collector Leakage Current
VCE=1200V, VGE=0V, TVj=25°C
VCE=1200V, VGE=0V, TVj=125°C
IGES
Gate Leakage Current
VCE=0V,VGE±15V, TVj=125°C
RGint
Integrated Gate Resistor
Qge
Gate Charge
VCE=600V, IC=15A , VGE=±15V
Cies
Input Capacitance
VCE=25V, VGE=0V, f =1MHz
Cres
Reverse Transfer Capacitance
td(on)
Turn - on Delay Time
tr
Rise Time
VCC=600V,IC=15A,
RG =62Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
td(off)
Turn - off Delay Time
tf
Fall Time
VCC=600V,IC=15A,
RG =62Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
Eon
Turn - on Energy
Eoff
Turn - off Energy
VCC=600V,IC=15A,
RG =62Ω,
VGE=±15V,
Inductive Load
TVj =25°C
TVj =125°C
TVj =25°C
TVj =125°C
ISC
Short Circuit Current
tpscâ¤10µS , VGE=15V
TVj=125°C,VCC=900V
RthJC
Junction-to-Case Thermal Resistance ï¼ Per IGBTï¼
Diode
VF
Forward Voltage
IF=15A , VGE=0V, TVj =25°C
IF=15A , VGE=0V, TVj =125°C
trr
Reverse Recovery Time
IF=15A , VR=600V
IRRM
Max. Reverse Recovery Current diF/dt=-400A/μs
Erec
Reverse Recovery Energy
TVj =125°C
RthJCD Junction-to-Case Thermal Resistance ï¼ Per Diodeï¼
Min.
5.0
-400
Typ.
5.8
1.7
1.9
0
0.15
1.1
0.05
90
90
25
30
420
520
90
120
1.4
2.0
1.0
1.2
45
1.65
1.75
150
15
0.6
Max.
6.5
50
1
400
1.2
2.1
Unit
V
V
V
µA
mA
nA
Ω
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
K /W
V
V
ns
A
mJ
K /W
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