MIMMG25H120X6TN Datasheet, PDF (4/6 Pages) Micross Components – 1200V 25A Six-Pack Module RoHS Compliant

50
V_CE =20V
40
T_Vj =25°C
30
20
T_Vj =125°C
10
0
5 6 7 8 9 10 11 12
V_GE（V）
Figure3. Typical Transfer characteristics
IGBT-inverter
V_CE=600V
10
R_G=36Ω
V_GE=±15V
T_Vj =125°C
8
6
E_on
4
E_off
2
00
10
20
30
40
50
I_C（A）
Figure5. Switching Energy vs. Collector Current
IGBT-inverter
50
40
30
20
T_Vj =125°C
10
T_Vj =25°C
0 _{0 0.5 1.0 1.5 2.0 2.5 3.0}
V_F（V）
Figure7. Diode Forward Characteristics
Diode -inverter
MIMMG25H120X6TN
5
V_CE=600V
I_C=25A
4
V_GE=±15V
T_Vj =125°C
E_on
3
2
E_off
1
00 _{10 20 30 40 50 60 70}
R_G（Ω）
Figure4. Switching Energy vs. Gate Resistor
IGBT-inverter
50
40
30
20 _RG=36Ω
V_GE=±15V
10
T_Vj =125°C
00 _{200 400 600 800 1000 1200 1400}
V_CE（V）
Figure6. Reverse Biased Safe Operating Area
IGBT-inverter
3.0
I_F=25A
2.5 ^VCE=600V
T_Vj =125°C
2.0
1.5
1.0
0.5
00 _{10 20 30 40 50 60 70}
R_G（Ω）
Figure8. Switching Energy vs. Gate Resistor
Diode -inverter