MIMMG100S060B6N Datasheet, PDF (4/5 Pages) Micross Components – 600V 100A IGBT Module RoHS Compliant

25
V_CC=300V
20
I_C=100A
T_J =25°C
15
10
5
00
100
200 300 400
500
Q_g（nC）
Figure7. Gate Charge characteristics
300
250
200
150
100
50
T_J =150°C
T_C =25°C
V_GE =15V
00 _{100 200 300 400 500 600 700}
V_CE（V）
Figure9. Reverse Biased Safe Operating Area
150
125
100
T_J =150°C
V_GE ≥15V
75
50
25
0
0 25 50 75 100 125 150 175
T_C Case Temperature(°C)
Figure11. Rated Current vs. T_C
MIMMG100S060B6N
10
C_ies
V_GE =0V
f=1MHz
1
C_oes
C_res
0.10 _{5 10 15 20 25 30 35}
V_CE（V）
Figure8. Typical Capacitances vs. V_CE
600
500
400
300
200
100
T_J =150°C
T_C =25°C
V_GE =15V
t_sc≤10µs
00 _{100 200 300 400 500 600 700}
V_CE（V）
Figure10. Short Circuit Safe Operating Area
210
175
140
T_J =125°C
105
70
T_J =25°C
35
0 _{0 0.5 1.0 1.5 2.0 2.5 3 3.5}
V_F（V）
Figure12. Diode Forward Characteristics