ICE4N73D Datasheet, PDF (4/4 Pages) Icemos Technology – Enhancement Mode MOSFET

ICE4N73D
Gate Threshold Voltage vs. Junction Temperature
1.3
1.2
1.1
I_D = 250µA
1.0
0.9
0.8
0.7
0.6
0.5
0.4
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Drain to Source Breakdown Voltage vs. Junction Temperature
1.15
1.1
I_D = 250µA
1.05
1.0
0.95
1000
900
800
Capacitance
700
600
Ciss
500
400
300
200
Coss
100
Crss
1
0
10
20
30
40
50
V_DS- Drain to Source Voltage (V)
Maximum Rate Forward Biased Safe Operating Area
100
Single Pulse
Tc = 25°C
T = 150°C
10
V_GS = 10V
10us
100us
1
1ms
10ms
0.1
R_{DS (ON)} Limit
DC
Package Limit
Thermal Limit
0.9
-50 -25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
0.01
0.1
1
10
100
V_DS- Drain to Source Voltage (V)
1.00
0.5
Transient Thermal Response - Junction to Case
1000
0.2
0.10
0.1
0.05
0.02
0.01
Notes:
P_DM
0.00
1.0E-05
Single Pulse
1.0E-04
t1
t2
Duty Cycle, D =
t1
t2
1.0E-03 1.0E-02
t - Time (seconds)
1.0E-01
1.0E-00
Micross Components Ltd, United Kingdom, Tel: [phone], Fax: [phone], Web: www.micross.com, Email: [e-mail]
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